BC859BW,115 datasheet

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• Маркировка
  BC859BW,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BC859BW,115 Collector- Emitter Voltage Vceo Max: - 30 V Configuration: Single Continuous Collector Current: - 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 220 Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1950315 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 30V Other Names: 934024310115, BC859BW T/R
• Количество страниц
  7 шт.
• Формат
  PDF

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• Размер файла
  65,34 KB

BC859BW,115 datasheet скачать

BC859BW,115 datasheet